Samsung kicks off transition to faster next-generation memory

Samsung announced its next-generation memory chips, which will double the speed of existing technology and offer the biggest capacity yet, with expectations to transition to the new standard by the second half of 2021. — AFP

Samsung Electronics Co. announced plans for its next-generation memory chips that will double the speed of existing technology and offer the biggest capacity yet, kicking off a transition that will accelerate the growth of data centers and supercomputing.

The world’s largest memory chipmaker said it developed 512GB DDR5 (Double Data Rate 5) memory modules based on a High-K Metal Gate (HKMG) fabrication process that’s traditionally been used in logic chips. DDR5 memory will be twice as fast as the current DDR4, while reducing leakage and using about 13% less power.