Samsung Electronics Co. announced plans for its next-generation memory chips that will double the speed of existing technology and offer the biggest capacity yet, kicking off a transition that will accelerate the growth of data centers and supercomputing.
The world’s largest memory chipmaker said it developed 512GB DDR5 (Double Data Rate 5) memory modules based on a High-K Metal Gate (HKMG) fabrication process that’s traditionally been used in logic chips. DDR5 memory will be twice as fast as the current DDR4, while reducing leakage and using about 13% less power.